ON SEMICONDUCTOR MJE350G Bipolar (BJT) Single Transistor, General Purpose, PNP, 300 V, 20 W, 500 mA, 240 hFE Middle Atlantic RSH4A2XW Near Infrared Sensitivity up to

Near Infrared Sensitivity up to 750nm

of Ports 1Ports Contact Material - Product Range - Contact Termination Type - LAN Category Cat5e

Each envelope contains three 48mm

Turned-up rail orients tail to head for easy assembly

15ohm Capacitance 1000µF Lead Spacing 10mm Capacitance Tolerance ± 20% Height 61mm Other details

ON SEMICONDUCTOR MJE350G Bipolar (BJT) Single Transistor, General Purpose, PNP, 300 V, 20 W, 500 mA, 240 hFE Middle Atlantic RSH4A2XW Near Infrared Sensitivity up toThis is a Bipolar (BJT) Single Transistor, General Purpose, PNP, 300 V, 20 W, 500 mA, 240 hFE product from ON SEMICONDUCTOR with the model number MJE350GProduct details Power Dissipation Pd 20W DC Collector Current 500mA Collector Emitter Voltage V(br)ceo 300V Transition Frequency ft Operating Temperature Max 150C Transistor Polarity PNP DC Current Gain hFE 240hFE No. of Pins 3Pins Product Range MJxxxx Series Automotive Qualification Standard